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SUD50N02-09P
Vishay Siliconix
SPECIFICATIONS (T J = 2 5 _ C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ a
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V (BR)DSS
V GS(th)
V GS = 0 V, I D = 250 m A
V DS = V GS , I D = 250 m A
20
0.8
3.0
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current b
Drain-Source On-State Resistance b
Forward Transconductance b
I GSS
I DSS
I D(on)
r DS(on)
g fs
V DS = 0 V, V GS = " 20 V
V DS = 20 V, V GS = 0 V
V DS = 20 V, V GS = 0 V, T J = 125 _ C
V DS = 5 V, V GS = 10 V
V GS = 10 V, I D = 20 A
V GS = 10 V, I D = 20 A, T J = 125 _ C
V GS = 4.5 V, I D = 20 A
V DS = 15 V, I D = 20 A
50
15
0.008
0.0135
" 100
1
50
0.0095
0.014
0.017
nA
m A
A
W
S
Dynamic a
Input Capacitance
C iss
1300
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge c
Gate-Source Charge c
Gate-Drain Charge c
C oss
C rss
Q g
Q gs
Q gd
V GS = 0 V, V DS = 10 V, f = 1 MHz
V DS = 10 V, V GS = 4.5 V, I D = 50 A
470
275
10.5
4.2
4.0
16
pF
nC
Gate Resistance
Turn-On Delay Time c
Rise Time c
Turn-Off Delay Time c
Fall Time c
R g
t d(on)
t r
t d(off)
t f
V DD = 10 V, R L = 0.2 W
I D ^ 50 A, V GEN = 10 V, R g = 2.5 W
1.6
4.0
8
10
25
12
6
12
15
40
20
W
ns
Source-Drain Diode Ratings and Characteristic (T C = 25 _ C)
Pulsed Current
I SM
100
A
Diode Forward Voltage b
Source-Drain Reverse Recovery Time
V SD
t rr
I F = 50 A, V GS = 0 V
I F = 50 A, di/dt = 100 A/ m s
1.2
35
1.5
70
V
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 m s, duty cycle v 2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25 _ C UNLESS NOTED)
100
Output Characteristics
100
Transfer Characteristics
80
V GS = 10 thru 6 V
5V
80
T C = ? 55 _ C
25 _ C
60
40
20
0
4V
3V
60
40
20
0
125 _ C
0
2
4
6
8
10
0
1
2
3
4
5
6
www.vishay.com
2
V DS ? Drain-to-Source Voltage (V)
V GS ? Gate-to-Source Voltage (V)
Document Number: 72034
S-41168—Rev. C, 14-Jun-04
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